Accession Number:

ADD007700

Title:

Infrared Semiconductor Device with Superlattice Region.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE ARMY WASHINGTON DC

Personal Author(s):

Report Date:

1979-07-31

Pagination or Media Count:

4.0

Abstract:

It is taught that infrared light can be produced by applying a voltage to a semiconductor device with a superlattice region and, further, that a population inversion can be achieved in such a device so that infrared amplification and oscillation can be produced. Methods of producing infrared radiation and of amplifying infrared radiation utilizing semiconductor devices with superlattice regions are disclosed. Also, semiconductor devices with superlattice regions for use as a laser amplifier or oscillator are taught. Author

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Infrared Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE