Infrared Semiconductor Device with Superlattice Region.
DEPARTMENT OF THE ARMY WASHINGTON DC
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It is taught that infrared light can be produced by applying a voltage to a semiconductor device with a superlattice region and, further, that a population inversion can be achieved in such a device so that infrared amplification and oscillation can be produced. Methods of producing infrared radiation and of amplifying infrared radiation utilizing semiconductor devices with superlattice regions are disclosed. Also, semiconductor devices with superlattice regions for use as a laser amplifier or oscillator are taught. Author
- Electrooptical and Optoelectronic Devices
- Infrared Detection and Detectors