Method of Selectively Etching a Semiconductor Substrate.
DEPARTMENT OF THE ARMY WASHINGTON DC
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The general object of this invention is to provide a method of selectively etching a semiconductor substrate. A further object is to provide such a method in which the resistance of photoresist masking films to semiconductor etchants is increased so that deep etching can take place either through long exposure periods or through the use of vigorous etchants. Author
- Solid State Physics