Accession Number:

ADD007502

Title:

Rare Earth Semiconductor Laser.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE ARMY WASHINGTON DC

Report Date:

1980-03-11

Pagination or Media Count:

4.0

Abstract:

A rare earth semiconductor laser is disclosed comprising a semiconductor material of the type Ln2TX5 where Ln is a rare earth element, T is zirconium or hafnium, and x is sulfur or selenium. The semiconductor contains neodymium as a dopant rare earth ion and can be made to lase by applying an electric voltage. Author

Subject Categories:

  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE