Microwave InP/SIO2 Insulated Gate Field Effect Transistor.
DEPARTMENT OF THE NAVY WASHINGTON DC
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AN InPSiO2 insulated gate field effect transistor which exhibits power gain at microwave frequencies is manufactured by using an n-type epitaxial semiconducting InP film on a semi-insulating InP substrate and depositing a pyrolytic silicon dioxide insulating film on the conducting InP film to form the gate insulator. Author
- Electrical and Electronic Equipment
- Solid State Physics