Accession Number:

ADD007233

Title:

Semiconductor Composition.

Descriptive Note:

Patent Application,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON DC

Personal Author(s):

Report Date:

1980-04-25

Pagination or Media Count:

48.0

Abstract:

A variable temperature method for the preparation of single and multiple epitaxial layers of single-phase e.g., face-centered cubic, ternary lead chalcogenide alloys e.g., lead cadmium sulfide, Pb sub 1-w Cd sub w a S sub 1-a wherein w varies between zero and fifteen hundredths, inclusive, and a0.500 or - 0.003, deposited upon substrates of barium fluoride, BaF2, maintained in near thermodynamic equilibrium with concurrently sublimated lead alloy and chalcogenide sources. During preparation, the temperature of the substrate is varied, thereby providing an epilayer with graded composition and predetermined electrical and optical properties along the direction of growth. This growth technique can be used to produce infrared lenses, narrowband detectors, and double heterojunction lasers. Author

Subject Categories:

  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE