Accession Number:

ADD005982

Title:

Radiation Dose Rate Hardened Light Detector.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE AIR FORCE WASHINGTON DC

Personal Author(s):

Report Date:

1979-04-03

Pagination or Media Count:

3.0

Abstract:

A radiation dose rate hardened light detector uses a Schottky diode island on a sapphire substrate. The thickness of the silicon is carefully adjusted to produce interference absorption at the light wavelength of interest. The light enters the silicon through the sapphire and is reflected off a metal electrode to produce the interference at the silicon-sapphire interface. Author

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Optics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE