Band Interacting Tunnel Heterojunctions.
DEPARTMENT OF THE ARMY WASHINGTON D C
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A bilateral tunnel device having a voltage dependent transfer coefficient is disclosed which includes a heterostructure consisting of a first layer of GaSb1-yASy, a second layer of In1-xGaxAs, and a third layer of GaSb1-7As7. The thicknesses of the first and third layers are not critical but the thickness of the second layer must be less than 200 angstroms thick. It is also disclosed that other alloys of Group III and Group V materials can be employed in a tunnel device of the instant invention. Author
- Solid State Physics