Accession Number:

ADD005627

Title:

Method for Fabricating MNOS Memory Circuits.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s):

Report Date:

1978-08-01

Pagination or Media Count:

5.0

Abstract:

MNOS memory circuit fabrication problems that result in leakage, memory device depletion mode switching and leakage paths at the edges of silicon islands are eliminated by a production process in which deposited and thermal oxides are used as a diffusion mask on the island edges, selective control of the threshold level of the memory device is achieved by ion implantation, and a thick oxide is grown on the silicon island edges to control charge injection. Author

Subject Categories:

  • Computer Hardware

Distribution Statement:

APPROVED FOR PUBLIC RELEASE