Method for Fabricating MNOS Memory Circuits.
DEPARTMENT OF THE AIR FORCE WASHINGTON D C
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MNOS memory circuit fabrication problems that result in leakage, memory device depletion mode switching and leakage paths at the edges of silicon islands are eliminated by a production process in which deposited and thermal oxides are used as a diffusion mask on the island edges, selective control of the threshold level of the memory device is achieved by ion implantation, and a thick oxide is grown on the silicon island edges to control charge injection. Author
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