Injection Laser Structures with a Periodic Active Region.
DEPARTMENT OF THE ARMY WASHINGTON D C
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An injection laser structure is disclosed in which the active region comprises a periodic heterojunction structure in which narrow potential barriers produce well defined allowed states in included potential wells included between the narrow potential barriers thereby reducing the current threshold for laser action. In the preferred embodiment, the narrow potential barriers are formed from Ga sub 1-x A1 sub x As, and the potential wells are created in GaAs. Author
- Lasers and Masers