Accession Number:

ADD005283

Title:

A Self-Aligned Process for Fabricating Radiation Hard CMOS/SOS Devices.

Descriptive Note:

Patent Application,

Corporate Author:

DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s):

Report Date:

1978-07-20

Pagination or Media Count:

10.0

Abstract:

The invention involves a self-aligned process for fabricating radiation hard semiconductor devices and includes the steps of irradiating a substrate with ions to form p-type regions, dividing the substrate into islands and depositing a masking material to form channel areas, growing a thick oxide over the exposed substrate material, removing the masking material, growing a radiation resistant gate oxide in place of the masking material and depositing alumininum metal over the structure after contact openings have been formed in the thick oxide. Author

Subject Categories:

  • Electrical and Electronic Equipment
  • Nuclear Radiation Shielding, Protection and Safety

Distribution Statement:

APPROVED FOR PUBLIC RELEASE