A Self-Aligned Process for Fabricating Radiation Hard CMOS/SOS Devices.
DEPARTMENT OF THE AIR FORCE WASHINGTON D C
Pagination or Media Count:
The invention involves a self-aligned process for fabricating radiation hard semiconductor devices and includes the steps of irradiating a substrate with ions to form p-type regions, dividing the substrate into islands and depositing a masking material to form channel areas, growing a thick oxide over the exposed substrate material, removing the masking material, growing a radiation resistant gate oxide in place of the masking material and depositing alumininum metal over the structure after contact openings have been formed in the thick oxide. Author
- Electrical and Electronic Equipment
- Nuclear Radiation Shielding, Protection and Safety