Accession Number:

ADD005272

Title:

MNOS Memory Transistor having a Redeposited Silicon Nitride Gate Dielectric.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s):

Report Date:

1978-06-20

Pagination or Media Count:

8.0

Abstract:

A processing technique utilizing two separate silicon nitride depositions one to form the memory regions and the second to form the nonmemory regions is employed to provide a radiation hard drain source protected memory transistor. The amount of silicon dioxide used in the nonmemory regions is also minimized. A typical device comprises a mesa etched from a silicon-on-sapphire SOS wafer into which P source and drain regions are implanted. A 100 A layer of silicon dioxide and a second 1000 A layer of nonmemory silicon nitride covers the mesa and the two layers are etched to define a substrate gate window. The gate window is covered by a 25 A layer of tunneling oxide A final 500 A layer of memory silicon nitride covers the mesa structure. Contact windows are etched to accommodate source, drain and gate interconnect electrodes. Author

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE