Fabrication of an Epitaxial Layer Diode in Aluminum Nitride on Sapphire.
DEPARTMENT OF THE AIR FORCE WASHINGTON D C
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An ultraviolet light emitting diode array of aluminum nitride grown on a sapphire substrate is fabricated by sputtering a preliminary layer of aluminum nitride onto a sapphire substrate, then placing said coated substrate in contact with a source of aluminum nitride and heating said composite in a particular atmosphere, resulting in the deposition of layers of aluminum nitride onto said coated substrate. Author