Accession Number:

ADD005266

Title:

Method for Fabrication of High Minority Carrier Lifetime, Low to Moderate Resistivity, Single Crystal Silicon.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s):

Report Date:

1978-06-13

Pagination or Media Count:

4.0

Abstract:

A polycrystalline rod of silicon is refined by repeatedly passing it through a zone melt condition, then a dopant impurity is ion implanted in the polycrystalline rod and a seed crystal is attached. A final zone melt pass is then made converting the rod to single crystal structure and distributing the dopant. Author

Subject Categories:

  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE