Method for Fabrication of High Minority Carrier Lifetime, Low to Moderate Resistivity, Single Crystal Silicon.
DEPARTMENT OF THE AIR FORCE WASHINGTON D C
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A polycrystalline rod of silicon is refined by repeatedly passing it through a zone melt condition, then a dopant impurity is ion implanted in the polycrystalline rod and a seed crystal is attached. A final zone melt pass is then made converting the rod to single crystal structure and distributing the dopant. Author