Accession Number:
ADD002964
Title:
N-Channel Deep Depletion Mode Semiconductor Device.
Descriptive Note:
Patent Application,
Corporate Author:
DEPARTMENT OF THE AIR FORCE WASHINGTON D C
Personal Author(s):
Report Date:
1976-06-15
Pagination or Media Count:
12.0
Abstract:
The patent application overcomes problems relating to gate dielectric breakdown and parasitic current flow around device boundaries in N-channel deep depletion mode semiconductors by a device structure that positions the gate window internal to the silicon island and provides P diffusion regions between the extremes of the gate window and the island edge. The structure permits the use of a thin deposit of oxide over the gate window and a substantially thicker coating of oxide over the rest of the silicon island and its edges.
Subject Categories:
- Electrical and Electronic Equipment
- Solid State Physics