Accession Number:

ADD002964

Title:

N-Channel Deep Depletion Mode Semiconductor Device.

Descriptive Note:

Patent Application,

Corporate Author:

DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s):

• Cricchi,James R.

Report Date:

1976-06-15

Pagination or Media Count:

12.0

Abstract:

The patent application overcomes problems relating to gate dielectric breakdown and parasitic current flow around device boundaries in N-channel deep depletion mode semiconductors by a device structure that positions the gate window internal to the silicon island and provides P diffusion regions between the extremes of the gate window and the island edge. The structure permits the use of a thin deposit of oxide over the gate window and a substantially thicker coating of oxide over the rest of the silicon island and its edges.

Descriptors:

• *Semiconductor devices
• *N type semiconductors
• Dielectric properties
• Silicon
• Sapphire

Subject Categories:

• Electrical and Electronic Equipment
• Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE