Lateral Photodetector of Improved Sensitivity.
DEPARTMENT OF THE NAVY WASHINGTON D C
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A lateral photodetector of improved sensitivity and method of making the same are described. The photodetector consists of semiconductive wafer, having a transparent layer of metal deposited on its front face to form a Schottky barrier. A negative bias is applied to the Schottky barrier to form a depletion region in the wafer. A low resistivity layer is formed on back of the wafer to which four signal electrodes are attached. Before forming the cell, the semiconductor wafer was exposed to nuclear radiation to increase the responsivity of the cell. The detectors are used in guidance systems to measure the position and intensity of laser energy reflected from a target.
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- Infrared Detection and Detectors