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Accession Number:
ADD002891
Title:
Double-Layer Oxide Gate Insulators for Field-Effect Transistors.
Descriptive Note:
Patent Application,
Corporate Author:
DEPARTMENT OF THE NAVY WASHINGTON D C
Report Date:
1976-07-02
Pagination or Media Count:
12.0
Abstract:
The patent application relates to double-layer oxide gate insulators for field effect transistors that are fabricated using gate insulating layers which are compatible with III-V intermetallic compounds. Specifically, indium phosphide is anodized to form the first layer and silicon dioxide is deposited over the first layer to form the second layer.
Distribution Statement:
APPROVED FOR PUBLIC RELEASE