Double-Layer Oxide Gate Insulators for Field-Effect Transistors.
DEPARTMENT OF THE NAVY WASHINGTON D C
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The patent application relates to double-layer oxide gate insulators for field effect transistors that are fabricated using gate insulating layers which are compatible with III-V intermetallic compounds. Specifically, indium phosphide is anodized to form the first layer and silicon dioxide is deposited over the first layer to form the second layer.
- Electrical and Electronic Equipment