Accession Number:

ADD002891

Title:

Double-Layer Oxide Gate Insulators for Field-Effect Transistors.

Descriptive Note:

Patent Application,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON D C

Personal Author(s):

• Herman,Wieder H.
• Wilmsen,Carl W.

Report Date:

1976-07-02

Pagination or Media Count:

12.0

Abstract:

The patent application relates to double-layer oxide gate insulators for field effect transistors that are fabricated using gate insulating layers which are compatible with III-V intermetallic compounds. Specifically, indium phosphide is anodized to form the first layer and silicon dioxide is deposited over the first layer to form the second layer.

Descriptors:

• *Field effect transistors
• *Dielectric films
• *Metal oxide semiconductors
• Indium phosphides
• Anodic coatings
• Silicon dioxide
• Deposition
• Intermetallic compounds
• Compatibility
• Group III compounds
• Group V compounds

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE