Accession Number:

ADD002717

Title:

Vacuum Deposition Method for Fabricating an Epitaxial PnSnTe Rectifying Metal Semiconductor Contact Photodetector.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON D C

Report Date:

1976-06-08

Pagination or Media Count:

5.0

Abstract:

The present invention provides a method for constructing an improved thick epitaxial film Pb1-xSnxTe or Pb1-xSnxSe Schottky barrier detector. The present invention discloses a method whereby epitaxial films are grown on a BaF2 crystalline substrate by the quasiequilibrium technique to create a Schottky barrier detector sensitive to electromagnetic radiation having wavelengths ranging from 8 to 14 micrometers. Strips of indium are used as the metal electrode and are deposited on the epitaxial film by thermal evaporation techniques without breaking the vacuum so as to preserve the quality of the metal-semiconductor interface. This creates a device which has all the advantages of an epitaxial exposure to radiation, without the complex problems of fabrication requiring special handling as, e.g. those faced in photolithography methods. The present invention provides an improved method for constructing infrared detectors.

Subject Categories:

  • Infrared Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE