Trapatt Planar-Mesa Diode.
DEPARTMENT OF THE AIR FORCE WASHINGTON D C
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The patent application relates to a TRAPATT diode formed in a planar-mesa configuration with a plane junction. An epitaxial layer of one conductivity type is deposited upon a substrate having an opposite conductivity type and forming a plane junction, with the impurity concentration of the substrate being greater than that of the epitaxial layer. A planar diffusion layer having the same conductivity type as the epitaxial layer but a higher impurity concentration, is embedded in the epitaxial layer and the sides are etched in a mesa configuration.
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