Accession Number:

ADD002542

Title:

Trapatt Planar-Mesa Diode.

Descriptive Note:

Patent Application,

Corporate Author:

DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s):

• Kroger,Harry

Report Date:

1976-03-17

Pagination or Media Count:

11.0

Abstract:

The patent application relates to a TRAPATT diode formed in a planar-mesa configuration with a plane junction. An epitaxial layer of one conductivity type is deposited upon a substrate having an opposite conductivity type and forming a plane junction, with the impurity concentration of the substrate being greater than that of the epitaxial layer. A planar diffusion layer having the same conductivity type as the epitaxial layer but a higher impurity concentration, is embedded in the epitaxial layer and the sides are etched in a mesa configuration.

Descriptors:

• *TRAPATT devices
• Planar structures
• Mesa diodes
• Epitaxial growth
• Diffusion
• N type semiconductors
• P type semiconductors
• Substrates

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE