Accession Number:
ADD002542
Title:
Trapatt Planar-Mesa Diode.
Descriptive Note:
Patent Application,
Corporate Author:
DEPARTMENT OF THE AIR FORCE WASHINGTON D C
Personal Author(s):
Report Date:
1976-03-17
Pagination or Media Count:
11.0
Abstract:
The patent application relates to a TRAPATT diode formed in a planar-mesa configuration with a plane junction. An epitaxial layer of one conductivity type is deposited upon a substrate having an opposite conductivity type and forming a plane junction, with the impurity concentration of the substrate being greater than that of the epitaxial layer. A planar diffusion layer having the same conductivity type as the epitaxial layer but a higher impurity concentration, is embedded in the epitaxial layer and the sides are etched in a mesa configuration.
Descriptors:
Subject Categories:
- Electrical and Electronic Equipment