Accession Number:

ADD002526

Title:

Method of Fabricating Ion Implanted ZnSe P-N Junction Devices.

Descriptive Note:

Patent,

Corporate Author:

DEPARTMENT OF THE AIR FORCE WASHINGTON D C

Personal Author(s):

Report Date:

1976-03-02

Pagination or Media Count:

12.0

Abstract:

Light emitting diodes, switching diodes with memory, and backward diodes are fabricated by phosphorus ion implantation of a p-n semiconductor junction in aluminum doped zinc selenide substrate material.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE