Accession Number:
ADD002240
Title:
High Density INSB PV IR Detectors.
Descriptive Note:
Patent,
Corporate Author:
DEPARTMENT OF THE NAVY WASHINGTON D C
Personal Author(s):
Report Date:
1975-10-28
Pagination or Media Count:
5.0
Abstract:
The present invention provides a process for fabricating a curved array of InSb photovoltaic infrared detectors. The process involves lapping an InSb wafer on a silk wrapped lapping wheel, diffusing the lapped surface of the wafer, abutting the diffused lapped surface of the wafer to a film photo mask which is curved over a quartz lens having the same radius of curvature as that of the lapped wafer, subjecting the diffused lapped surface of the wafer to ultraviolet light by shining the light through the quartz lens and film photo mask, etching the wafer and attaching the required connectors.
Descriptors:
Subject Categories:
- Electrical and Electronic Equipment
- Manufacturing and Industrial Engineering and Control of Production Systems
- Infrared Detection and Detectors