Accession Number:

ADD002045

Title:

Damage Thresholds of P-N Junction Devices by a Current Pulse Method.

Descriptive Note:

Patent Application,

Corporate Author:

DEPARTMENT OF THE NAVY WASHINGTON D C

Personal Author(s):

• Petree,Marcella C.

Report Date:

1975-02-07

Pagination or Media Count:

14.0

Abstract:

The patent application provides an improved method for determining the damage threshold of a semiconductor p-n junction. It uses a constant current pulse so that when second breakdown begins the power applied to the device junction is decreased. The power applied up to the point of second breakdown is constant and easily determined from the oscilloscope traces of voltage and current. In addition, the power is clearly more indicative of the power handling capabilities of the devices p-n junction.

Descriptors:

• *Junction transistors
• *Semiconductor diodes
• *Nondestructive testing
• Patents
• Breakdown(Electronic threshold)
• Test methods
• Damage
• Failure(Electronics)
• Transients
• Electromagnetic pulses
• Second breakdown

Subject Categories:

• Electrical and Electronic Equipment
• Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE