Silicon Detector Materials Characterization.
Final technical rept. 15 Feb 76-30 Jun 78,
DAYTON UNIV OH RESEARCH INST
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Hall measurements have been made on ultra-high purity silicon using the van der Pauw technique as well as conventional Hall bars. Residual impurity concentrations were determined from least squared fits to the carrier concentration versus 1000T curves. Activation energy of the boron was determined from the slope of the freezeout region of the carrier concentration curve. Carrier mobility was monitored for indications of adverse scattering effects. Mobility was limited only by lattice effects and routinely exceeded values of 100,000 centimeters squared per voltsecond at 20 K. Room temperature resistvity was measured to check compliance with Air Force detector requirements. Studies to theoretically determine the nature of scattering mechanisms, and the effect of the r-factor, were also carried out. A photoluminescence facility was established at AFML midway in the program. A simple, bench top, method of contacting ultra-high purity p-type silicon was also developed. Author
- Infrared Detection and Detectors
- Solid State Physics