Theory and Operating Characteristics of TRAPATT Amplifiers
MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
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This report describes the current state of understanding of the theory and operating characteristics of microwave avalanche diodes operating in the TRAPATT mode as both oscillators and amplifiers. Device operating principles, and their dependence upon material, impurity profile, structure, biasing and circuit loading, are described. Methods of device fabrication are discussed, and present state of the art is tabulated for oscillators and amplifiers on a power-frequency basis. Techniques developed for the design of TRAPATT amplifiers as a result of several programs sponsored by the U.S. Army Ballistic Missile Defense Advanced Technology Center are discussed, and experimental results primarily at S-band are presented.
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