Accession Number:

ADB015785

Title:

C. W. GaAs Diode Laser

Descriptive Note:

Final rept. 1 Dec 1973-2 Dec 1974

Corporate Author:

TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR GROUP

Personal Author(s):

Report Date:

1975-12-01

Pagination or Media Count:

98.0

Abstract:

Techniques for improving the performance of CW laser diodes at 77K were investigated. Work concentrated on the single heterostructure laser. The liquid-phase epitaxial growth procedure, the doping concentrations, and the active recombination region thickness were optimized to achieve low threshold currents high slope efficiencies, and narrow emission beams. A double-sided copper heat sink design incorporating intermediate submounts was used. The submounts were used for improved control during mounting of the laser and to reduce thermal resistance by use of high thermal conductivity materials. A suitable assembly process was established after the solution of various problems. To be continued at Check Maik.

Subject Categories:

  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE