Reliability Evaluation of Aluminum Implanted CMOS Microcircuits
ROME AIR DEVELOPMENT CENTER GRIFFISS AFB NY
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A reliability evaluation of Complementary Metal Oxide Semiconductor CMOS microcircuits which were made hard to total ionizing dose by means of ion implanting aluminum in the gate insulator was conducted. The testing revealed the existence of room temperature threshold voltage instabilities. Failure analysis isolated the cause to charge migration within the insulator. A complete description of the instability in relation to temperature and gate voltage is developed. Finally, a model for the CMOS behavior under temperature bias conditions as well as radiation response is proposed.
- Electrical and Electronic Equipment
- Nuclear Radiation Shielding, Protection and Safety