Accession Number:

ADB011849

Title:

Reliability Evaluation of Aluminum Implanted CMOS Microcircuits

Descriptive Note:

Technical rept.

Corporate Author:

ROME AIR DEVELOPMENT CENTER GRIFFISS AFB NY

Personal Author(s):

Report Date:

1976-02-01

Pagination or Media Count:

78.0

Abstract:

A reliability evaluation of Complementary Metal Oxide Semiconductor CMOS microcircuits which were made hard to total ionizing dose by means of ion implanting aluminum in the gate insulator was conducted. The testing revealed the existence of room temperature threshold voltage instabilities. Failure analysis isolated the cause to charge migration within the insulator. A complete description of the instability in relation to temperature and gate voltage is developed. Finally, a model for the CMOS behavior under temperature bias conditions as well as radiation response is proposed.

Subject Categories:

  • Electrical and Electronic Equipment
  • Nuclear Radiation Shielding, Protection and Safety

Distribution Statement:

APPROVED FOR PUBLIC RELEASE