Accession Number:

ADB011702

Title:

Study of Radiation Effects in Bulk CMOS Microcircuits, I2L/LSI Logic Cells and Optical Couplers

Descriptive Note:

Final rept. Jan-Dec 1974

Corporate Author:

NORTHROP RESEARCH AND TECHNOLOGY CENTER PALOS VERDES PENINSULA CA

Report Date:

1975-06-01

Pagination or Media Count:

201.0

Abstract:

Results are presented on the study of radiation effects in bulk CMOS microcircuits, basic logic cells of developmental integrated-injection-logic I2L LSI, and optical couplers. Radiation effects considered include the permanent damage effects resulting from neutron displacement damage and total ionizing radiation dose. Transient photoresponse has been measured as a function of ionizing radiation pulse width. CMOS latch-up was investigated as induced by electrical pulsed overstress andor pulsed ionizing radiation exposure. No significant synergistic effects were observed.

Subject Categories:

  • Electrical and Electronic Equipment
  • Nuclear Radiation Shielding, Protection and Safety

Distribution Statement:

APPROVED FOR PUBLIC RELEASE