Study of Radiation Effects in Bulk CMOS Microcircuits, I2L/LSI Logic Cells and Optical Couplers
Final rept. Jan-Dec 1974
NORTHROP RESEARCH AND TECHNOLOGY CENTER PALOS VERDES PENINSULA CA
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Results are presented on the study of radiation effects in bulk CMOS microcircuits, basic logic cells of developmental integrated-injection-logic I2L LSI, and optical couplers. Radiation effects considered include the permanent damage effects resulting from neutron displacement damage and total ionizing radiation dose. Transient photoresponse has been measured as a function of ionizing radiation pulse width. CMOS latch-up was investigated as induced by electrical pulsed overstress andor pulsed ionizing radiation exposure. No significant synergistic effects were observed.
- Electrical and Electronic Equipment
- Nuclear Radiation Shielding, Protection and Safety