Accession Number:

ADB004233

Title:

Investigation of Semiconductor Lasers for Wideband Recording

Descriptive Note:

Final technical rept. Nov 1973-Nov 1974

Corporate Author:

RCA ADVANCED TECHNOLOGY LABS CAMDEN NJ

Personal Author(s):

Report Date:

1975-03-01

Pagination or Media Count:

93.0

Abstract:

The purpose of this investigation was to determine if it is feasible to build a wideband laser recorder using a semiconductor laser as the film exposure source. The argon laser and its external light modulator of a Government furnished, developmental wideband FM recorderreadout system were replaced by an internally modulated laser diode. The lasers were developmental Al GaAs devices supplied by RCA Laboratories. These double-heterojunction lasers were capable of emitting continuous output powers up to 10 mW at 710 nm when operated at 77 K. The semiconductor lasers have been internally modulated from 1-200 MHz or - 2 dB and film recording frequencies in excess of 100 MHz 160 cyclesmm have been made. Stationary film playback of a 30-MHz FM recording achieved a 31 dB p-p to rms wideband signal-to-noise ratio over a 30-MHz bandwidth. Tradeoffs for diode operation at elevated temperatures are discussed. Comparisons are made between semiconductor laser performance and data taken previously on the argon laser recorder.

Subject Categories:

  • Lasers and Masers
  • Recording and Playback Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE