Accession Number:

ADB000339

Title:

Radiation and Thermally Hardened Switching Materials

Descriptive Note:

Semi-annual report no. 4, 31 Dec 1973-30 Jun 1974

Corporate Author:

BELFER GRADUATE SCHOOL OF SCIENCE NEW YORK

Personal Author(s):

Report Date:

1974-10-01

Pagination or Media Count:

24.0

Abstract:

A method has been developed by which fast switching devices can be derived which have a high current carrying capability and are radiation hard. These devices are based on a junction between a conducting substrate and an oxide which can undergo a semiconductor-to-metallic transition. Example NbO metalNbO2 semiconductor to metallic transiTiOn at 807 C or TIO metal Ti3O5 semiconductor to metallic transition at 135 C. VOVO2 was also tried and it does work. However the off resistance is somewhat low and the device fragile because of the closeness to the actual transition temperature approximately 65 C. It appears however that there are two distinct stages one stage during which the junction behaves as Schottky diode, which is immediately followed by a stage of thermal runaway. More fundamental studies of this phenomena are certainly needed to fully exploit its potential.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE