Accession Number:

ADB000051

Title:

Beam Technology for the Fabrication of Microwave Integrated Circuits.

Descriptive Note:

Final technical rept., 2 Jan 73-31 Mar 74,

Corporate Author:

HUGHES RESEARCH LABS MALIBU CA

Personal Author(s):

Report Date:

1974-03-31

Pagination or Media Count:

84.0

Abstract:

This report discusses the progress made during the fourth phase of a multiyear program, January 1973 through March 1974, to demonstrate the feasibility of maskless doping by a focused programmable ion beam. A detailed discussion is given of further development of the experimental tiny ion beam system to include the ability to register ion beam patterns with existing structure on a structure on a surstrate. A registration accuracy of about one beam diameter, or 5 micrometers is reported. The size of the ion beams scan field was measured and found to be about 0.5 mm x 0.5mm. Various possible applications of the tiny beam to microfabrication are studied. The microwave field effect transistor is chosen as an important example of how a focused ion beam can create a laterally varying doping profile in the plane of a wafer. It is shown by analysis that by tailoring the channel doping along the width of the channel, the gain range of an FET can be extended from one to four orders of magnitude. The results are presented of the first GaAs FET that was tailored by a focused ion beam under computer control. The electrical characteristics of this tailored device are in good qualitative agreement with those predicted by the analysis.

Subject Categories:

  • Electrical and Electronic Equipment
  • Particle Accelerators
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE