Characterization of 3000 Volt MOS Controlled Thyristors
ARMY LAB COMMAND FORT MONMOUTH NJ ELECTRONICS TECHNOLOGY AND DEVICES LAB
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The MOS Controlled Thyristor MCT is a power thyristor which is turned on and off by a highly interdigitated surface array of MOSFET gates. The high-voltage diffusion-doped MCTs were developed by a three year contractual effort. These prototype MCTs have blocking voltages up to 3000 volts with a maximum controllable turn-off current density of 325 Acm2 in a 1 cm2 active area die. A typical forward voltage drop is 2.5 V at 100 A with a 1090 recovery time of 5 micro S. Characterization of these devices was undertaken and has shown surge turn-on capability of 15.5 kA in a 16 micro S FWHM pulse parallel operation of 3 devices at 300 A total current with less than 10 variation and series operation. of 3 devices at 5 kV, 150 A.
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