Accession Number:

ADA639317

Title:

Single Shot and Burst Repetitive Operation of Involute Gate 125mm Symmetric Thyristors Up to 221 Ka with a Di/Dt of 2.0 Ka/Us

Descriptive Note:

Conference paper

Corporate Author:

ARMY RESEARCH LAB ADELPHI MD

Report Date:

1999-06-01

Pagination or Media Count:

6.0

Abstract:

Previously 1,we reported on the operation and limitations of a six-point star gate design 125mm thyristor. An involute gate design has been developed that provides a significant increase in ability to handle higher peak currents and didts. For this study we selected a 2.5 kV symmetric version of the device. The test facility uses a 10 omega PFN with a rectangular pulse width FWHM of 465 mus. All tests were performed with an essentially shorted load in order to achieve 200 kA operation and to instantaneously apply a 111 voltage reversal in less than 3 mus at the end of the current pulse. Reliable operation was demonstrated at 2.6 kV forward voltage with a reverse voltage of 2.3 kV. The peak current was 203 kA with a didt of 1.8 kA mup. The charge was 82 C and the action was 13.8 MA2s. The reverse charge was 0.19 C. The PFN was modified to reduce the impedance and simulate a sinusoidal pulse in excess of 1 kHz. Reliable operation was obtained at 221 kA with a didt at 2.0 kAmus. The pulse width FWHM was 301 mus with a base width of 455 mus. Forward voltage was 2.4 kV with a reverse voltage of 2.3 kV. The forward charge, reverse charge and action were 63 C, 0.51 C and 10.9 MA2s respectively. Reliable repetitive operation was performed at 151 kA with a burst of 10 pulses and a 20 second interval behveen pulses. No temperature effects were observed.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE