Investigation of Optically Induced Avalanching in GaAs
TEXAS UNIV AT ARLINGTON
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This paper discusses preliminary results of the investigation of optically induced avalanching in bulk GaAs switches. An experimental arrangement with sub-nanosecond resolution has been devised that can evaluate the avalanche phenomena as a function of time. This permits characterization of the temporal variation in the avalanche breakdown. The system arrangement, measurement techniques, and experimental data are presented.
- Electrical and Electronic Equipment
- Electrooptical and Optoelectronic Devices
- Electricity and Magnetism