Accession Number:

ADA636905

Title:

Device Performance and Reliability Improvements of AlGaBN/GaN/Si MOSFET

Descriptive Note:

Final rept. 23 Jun 2014-22 Dec 2015

Corporate Author:

TEXAS UNIV AT DALLAS

Personal Author(s):

Report Date:

2016-02-04

Pagination or Media Count:

23.0

Abstract:

A half cycle study of plasma enhanced atomic layer deposited PEALD Al2O3 on AlGaN is investigated using in situ X-ray photoelectron spectroscopy, low energy ion scattering, and ex situ electrical characterizations. A faster nucleation or growth is detected from PEALD relative to purely thermal ALD using an H2O precursor. The remote O2 plasma oxidizes the AlGaN surface slightly at the initial stage, which passivates the surface and reduces the OFF-state leakage. This work demonstrates that PEALD is a useful strategy for Al2O3 growth on AlGaNGaN devices. In addition, unpublished work on AlN films are grown on AlGaNGaN using PEALD is presented. An AlON interfacial layer is detected at the initial stage, and the interfacial layer may result in a high interface state density. The further optimization of PEALD AlN, especially at the initial stage is necessary in order to passivate the AlGaNGaN HETMs using the PEALD AlN.

Subject Categories:

  • Electrical and Electronic Equipment
  • Manufacturing and Industrial Engineering and Control of Production Systems

Distribution Statement:

APPROVED FOR PUBLIC RELEASE