Accession Number:

ADA636864

Title:

Silicon Based Mid Infrared SiGeSn Heterostructure Emitters and Detectors

Descriptive Note:

Final rept. 17 Jun 2014-16 Dec 2015

Corporate Author:

MASSACHUSETTS UNIV DARTMOUTH

Personal Author(s):

Report Date:

2016-05-16

Pagination or Media Count:

11.0

Abstract:

We have investigated the surface plasmon enhancement of the GeSn p-i-n photodiode using gold metal nanostructures. We have conducted numerical simulation of the plasmonic structure of 2D nano-hole array to tune the surface plasmon resonance into the absorption range of the GeSn active layer. Such a structure is fabricated using FIB on a previously made photodiode for feasibility demonstration. The result indicates that the photocurrent of the diode can indeed be enhanced with the plasmonic structure on top. Within the time span of this project, we have completed one iteration of the process that includes design, fabrication, and characterization. There is room to improve and future optimization of the design and fabrication should yield more improvement.

Subject Categories:

  • Electrical and Electronic Equipment
  • Miscellaneous Detection and Detectors
  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE