Fundamental Study of Antimonide Nanostructures by Molecular Beam Epitaxy
Final rept. 30 Sep 2014-29 Sep 2015
CHULALONGKORN UNIV BANGKOK (THAILAND)
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The research objective was to conduct experimental work in molecular beam epitaxial growth of GaSbGaAs and InSbGaAs quantum dots QDs are conducted and compared with conventional InAsGaAs QDs on 001 Ge substrates and on 001 GaAs substrates for comparison.
- Quantum Theory and Relativity