Accession Number:

ADA636863

Title:

Fundamental Study of Antimonide Nanostructures by Molecular Beam Epitaxy

Descriptive Note:

Final rept. 30 Sep 2014-29 Sep 2015

Corporate Author:

CHULALONGKORN UNIV BANGKOK (THAILAND)

Personal Author(s):

Report Date:

2016-02-04

Pagination or Media Count:

10.0

Abstract:

The research objective was to conduct experimental work in molecular beam epitaxial growth of GaSbGaAs and InSbGaAs quantum dots QDs are conducted and compared with conventional InAsGaAs QDs on 001 Ge substrates and on 001 GaAs substrates for comparison.

Subject Categories:

  • Crystallography
  • Quantum Theory and Relativity

Distribution Statement:

APPROVED FOR PUBLIC RELEASE