Accession Number:

ADA635078

Title:

Optimization of GaN Nanorod Growth Conditions for Coalescence Overgrowth

Descriptive Note:

Final rept. 29 Nov 2013-28 May 2015

Corporate Author:

NATIONAL TAIWAN UNIV TAIPEI GRADUATE INST OF PHOTONICS AND OPTOELECTRONICS

Personal Author(s):

Report Date:

2016-02-04

Pagination or Media Count:

21.0

Abstract:

The growth and fabrication of GaN nanorod NR light-emitting diode LED arrays have attracted much attention because of their advantages of higher crystal quality, larger sidewall emission area, and non-polar or semi-polar quantum well QW formation. This report describes development of regularly-patterned GaN NR LED arrays grown on a patterned template with either continuous or pulsed growth mode using metal-organic vapor-phase epitaxy MOVPE. Such an array device is expected to be useful for practical lighting application. Usually, with the pulsed growth mode, by switching group-III and V sources on and off alternatively, the NR geometry can be more uniform over an array. InGaNGaN QWs can be deposited on the c-plane top face, m-plane sidewalls, and 1-101-plane slant facets on a c-axis-oriented NR with the highest lowest growth rate in the c-plane 1-101-plane. After the overgrowth of p-GaN on an NR with n-GaN core and QW deposition, an NR LED array can be implemented by covering the NRs with a transparent conductor. It has been demonstrated that the optical and electrical performances of an NR LED array can be comparable to those of a planar LED. Further developments in NR LED growth and process techniques can lead to an outperforming LED device with the NR structure.

Subject Categories:

  • Inorganic Chemistry
  • Electrooptical and Optoelectronic Devices
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE