Evaluation of a 7 kV 80 kA SGTO Module
BERKELEY RESEARCH ASSOCIATES INC ADELPHI MD
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This work was undertaken to investigate the switching performance of Super GTOs SGTO under conditions of fast rise times up to 25 kAus, high peak current up to 80 kA, blocking voltage of 7 kV and pulse width of 100 us. The device under test is a switch that is made of two 3.5 kV modules placed in series each containing eight SGTO die in parallel. The SGTO die developed by Silicon Power Corporation SPCO have a very small gate structure of approximately 10 m. The benefit of this small gate structure is that it allows the device to reach full conduction faster than a conventional thyristor and is therefore optimized for fast turn-on high didt. The SGTO die is a very efficient device having a current density of 29.7 Amm2 at 10 kA. Each SGTO die can hold of 3.5 kV and can conduct 10 kA. The efficiency of the SGTO die warrants evaluation of this dual module SGTO switch that is rated at 7 kV and 80 kA. The evaluation of the dual module will also determine its overall ability to be used in other voltage and current configurations for various applications by determining its safe operating area SOA. We have evaluated the switch at 6 kV at a maximum current of 86 kA over a 120 s pulse width and with a didt of 25 kAmicrosecond.
- Electrical and Electronic Equipment