Accession Number:

ADA634887

Title:

Material-Dependent Electric Field Enhancement of Photoconductivity in Gallium Arsenide

Descriptive Note:

Conference paper

Corporate Author:

ARMY ELECTRONICS TECHNOLOGY AND DEVICES LAB FORT MONMOUTH NJ

Personal Author(s):

• Burke, T.
• Weiner, M.
• Vezzoli, G. C.

Report Date:

1989-06-01

Pagination or Media Count:

4.0

Abstract:

Pulsed laser measurements on as-grown and thermally processed gallium arsenide show a material dependent photoconductivity. The pulsed voltage measurements on as-grown material provide evidence of a gain mechanism. An understanding of the photocurrent gain on the nature of the bulk gallium arsenide may be useful in explaining the lock-on phenomenon and in designing high power GaAs photoconductive devices.

Descriptors:

• *ELECTRIC FIELDS
• *GALLIUM ARSENIDES
• *PHOTOCONDUCTIVITY
• ELECTRIC CURRENT
• PHOTOELECTRICITY
• PULSED LASERS
• VOLTAGE

Subject Categories:

• Inorganic Chemistry
• Electrooptical and Optoelectronic Devices

Distribution Statement:

APPROVED FOR PUBLIC RELEASE