Material-Dependent Electric Field Enhancement of Photoconductivity in Gallium Arsenide
ARMY ELECTRONICS TECHNOLOGY AND DEVICES LAB FORT MONMOUTH NJ
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Pulsed laser measurements on as-grown and thermally processed gallium arsenide show a material dependent photoconductivity. The pulsed voltage measurements on as-grown material provide evidence of a gain mechanism. An understanding of the photocurrent gain on the nature of the bulk gallium arsenide may be useful in explaining the lock-on phenomenon and in designing high power GaAs photoconductive devices.
- Inorganic Chemistry
- Electrooptical and Optoelectronic Devices