Investigation of a Laser-Controlled, Copper-Doped GaAs Closing and Opening Switch for Pulsed Power Applications
NAVAL SURFACE WARFARE CENTER DAHLGREN VA
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This paper describes the recent power scaling of the Bulk Optically Controlled Semiconductor Switch BOSS. The processes of persistent photoconductivity followed by photo-quenching have been demonstrated in copper-compensated, silicon-doped, semi-insulating GaAs GaAsCuSi. These processes allow a switch to be developed which can be closed by the application of one laser pulse and opened by the application of a second laser pulse of longer wavelength. The high-power switching results indicate that the BOSS device will operate at multi-megawatt power levels. The results of our power scaling effort have suggested improvements to the basic BOSS design that will allow us to achieve reliable operation at high power levels.
- Electrical and Electronic Equipment