Ultrahigh-Speed Electrically Injected 1.55 micrometer Quantum Dot Microtube and Nanowire Lasers on Si
MCGILL UNIV MONTREAL (CANADA)
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In this report, we describe the progress made in rolled-up InP-based tube lasers and in the growth and characterization of III-nitride nanowire structures on Si. We report on the demonstration of electrically injected rolled-up InP-based tube lasers, which exhibit a threshold current 1.05 mA. We also describe the achievements of electrically injected AlGaN nanowire lasers that can operate in the UV-AII 315-340 nm, UV-B 280-315nm, and UV-C 200-280 nm.
- Electrical and Electronic Equipment
- Lasers and Masers