Accession Number:

ADA626787

Title:

Infrared Emitters and Photodetectors with InAsSb Bulk Active Region

Descriptive Note:

Conference paper

Corporate Author:

STATE UNIV OF NEW YORK AT STONY BROOK

Report Date:

2013-04-29

Pagination or Media Count:

13.0

Abstract:

Bulk unrelaxed InAsSb alloys with Sb compositions up to 44 and layer thicknesses up to 3 um were grown by molecular beam epitaxy. The alloys showed photoluminescence PL energies as low as 0.12 eV at T13K. The electroluminescence and quantum efficiency data demonstrated with unoptimized barrier heterostructures at T80 and 150K suggested large absorption coefficient and carrier lifetimes sufficient for the development of long wave infrared photodetectors and emitters with high quantum efficiency. The minority hole transport was found to be adequate for development of the detectors and emitters with large active layer thickness.

Subject Categories:

  • Physical Chemistry
  • Infrared Detection and Detectors
  • Electricity and Magnetism
  • Optics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE