Accession Number:

ADA626702

Title:

International Symposium on the Growth of III-Nitrides (ISGN), May 18-22, 2014, Atlanta GA

Descriptive Note:

Final rept. 1 May-31 Dec 2014

Corporate Author:

MATERIALS RESEARCH SOCIETY WARRENDALE PA

Personal Author(s):

Report Date:

2015-03-31

Pagination or Media Count:

13.0

Abstract:

The International Symposium on the Growth of III-Nitrides ISGN series of conferences have been premier international forums for experts from academia, industry, and national laboratories to present their latest progress and exchange ideas in the fundamental and applied aspects of III-N bulk and epitaxial growth technologies as well as related device advances. III-N compound semiconductor materials underlie many of todays most advanced high-performance devices such as LEDs, laser diodes, and transistors, which are becoming an essential part of the solution of many global problems. In the future, III-N solar cells, nanostructure materials, and other innovative devices will play a similar significant role in improving the human condition.

Subject Categories:

  • Inorganic Chemistry
  • Electrical and Electronic Equipment
  • Electrooptical and Optoelectronic Devices
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE