An Extended Defect as a Sensor for Free Carrier Diffusion in a Semiconductor
NORTH CAROLINA UNIV AT CHARLOTTE
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We use confocal photoluminescence microscopy to study carrier diffusion near an isolated extended defect ED in GaAs. We observe that the carrier diffusion length varies nonmonotonically with carrier density, which we attribute to competition between point defects and the extended defect. High density laser illumination induces a permanent change in the structure of the extended defect, more significantly an apparent change in the effective polarity of the defect, and thus a drastic change in its range of influence. The inferred switch of principal diffusing species leads to a potential design consideration for high injection optoelectronic devices.
- Electrical and Electronic Equipment