Growth And Characterization Studies Of Advanced Infrared Heterostructures
Final rept. 15 Feb 2013-9 May 2014
NEW MEXICO UNIV ALBUQUERQUE
Pagination or Media Count:
The goal of this project was to investigate band structure engineering in infared detectors based on Type II superlattice detectors T2SLs. The origin of high dark current levels in the InAsInGaSb T2SL infrared photodetectors was to be investigated. The presence of Shockley-Read-Hall centers degrade the minority carrier lifetime and have been identified as one of the major reasons for the high dark current of T2SL material.
- Infrared Detection and Detectors