Control of Anion in Corporation in the Molecular Beam Epitaxy of Ternary Antimonide Superlattices for Very Long Wavelength Infrared Detection (Postprint)
Interim rept. 17 Jan 2013-1 Sep 2015
DAYTON UNIV RESEARCH INST OH
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Authors discuss how anion incorporation was controlled during the epitaxial growth process to develop InAsGaInSb superlattice SL materials for very long wavelength infrared applications. A SL structure of 47.0 Angstrom InAs21.5 Angstrom Ga0.75In0.25Sb was selected to create a very narrow band gap.Although a molecular beam epitaxy growth developed can produce a strain balanced ternary SL structure with a precisely controlled band gap around 50 meV, the material quality of grown SL layers is particularly sensitive to growth defects formed during an anion incorporation process. Since Group III antisites are the dominant structural defects responsible for the low radiative efficiencies, the authors focus on stabilizing IIIV incorporation during SL layer growth by manipulating the growth surface condition for a specific anion crackingcondition. The optimized ternary SL materials produced an overall strong photoresponse signal with a relatively sharp band edges and a high mobility of 10,000 cm2V s that is important for developing infrared materials.