Accession Number:

ADA625566

Title:

Conduction- and Valence-Band Energies in Bulk InAs(1-x)Sb(x) and Type II InAs(1-x) Sb(x)/InAs Strained-Layer Superlattices

Descriptive Note:

Journal article

Corporate Author:

STATE UNIV OF NEW YORK AT STONY BROOK

Report Date:

2013-03-08

Pagination or Media Count:

12.0

Abstract:

The energy gaps were studied in two types of structures unrelaxed bulk In- As1-xSbx layers with x 0.2 to 0.46 grown on metamorphic buffers and type II InAs1-xSbxInAs strained-layer superlattices SLS with x 0.225 to 0.296 in the temperature range from T 13 K to 300 K. All structures were grown on GaSb substrates. The longest wavelength of photoluminescence PL at low temperatures was observed from bulk InAs0.56Sb0.44 with a peak at 10.3 um and full-width at half-maximum FWHM of 11 meV. The PL data for the bulk InAs1-xSbx materials of various compositions imply an energy gap bowing parameter of 0.87 eV. A low-temperature PL peak at 9.1 um with FWHM of 13 meV was observed for InAs0.704Sb0.296InAs SLS. The PL spectrum of InAs0.775Sb0.225InAs SLS under pulsed excitation revealed a second peak associated with recombination of electrons in the three-dimensional 3D continuum with holes in the InAs0.775Sb0.225. This experiment determined the conduction-band offset in the InAs0.775Sb0.225InAs SLS. The energies of the conduction and valence bands in unstrained InAs1-xSbx and their bowing with respect to the Sb composition are discussed.

Subject Categories:

  • Physical Chemistry
  • Electrooptical and Optoelectronic Devices
  • Optics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE