Accession Number:

ADA625367

Title:

Effect of Defects on III-V MWIR nBn Detector Performance

Descriptive Note:

Conference paper

Corporate Author:

ROCHESTER UNIV NY

Report Date:

2014-08-01

Pagination or Media Count:

8.0

Abstract:

Under elevated defect concentrations, MWIR, III-V nBn detectors exhibit diffusion limited performance with elevated dark current densities. The resulting diffusion current is limited by the generation of carriers through defect states in the neutral n-type absorber and a dark current dependence on the defect density described by one of two limits, a short absorber or long absorber limit. This characteristic contrasts that exhibited by defect limited, conventional pn junction based photodiodes which exhibit performance limited by Shockley-Read-Hall generation in the depletion layer rather than diffusion based processes.

Subject Categories:

  • Electrical and Electronic Equipment
  • Optical Detection and Detectors
  • Infrared Detection and Detectors
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE