Accession Number:

ADA625232

Title:

Ultra-Flexible, Invisible Thin-Film Transistors Enabled by Amorphous Metal Oxide/Polymer Channel Layer Blends

Descriptive Note:

Journal article

Corporate Author:

NORTHWESTERN UNIV EVANSTON IL

Report Date:

2015-02-25

Pagination or Media Count:

11.0

Abstract:

Metal oxide MO semiconductors have attracted considerable attention for next-generation electronic devices because of their high carrier mobilities, even in the amorphous state, and good environmental stability. 15 Equally important, the high optical transparency of MO semiconductors can enable fully transparent thin-film transistors TFTs, which are essential for the fabrication of invisible circuits and to increase the aperture ratio of active-matrix organic light-emitting diode AMOLED and liquid-crystal LC displays. 6 10 Therefore, since the first report of a fully transparent MO-based TFT in 2003, 13 extensive academic and industrial efforts have focused on enhancing device performance for both opaque and transparent applications. 11,12 Nevertheless, the best performing MO TFTs are typically fabricated by capital-intensive physical and chemical vapor deposition processes. Thus, a key issue for inexpensive large-scale roll-to-roll production is to enable MO TFT manufacturing with solution-based process methodologies. Another key feature of amorphous MO semiconductors is tolerance to mechanical stress, a requirement for device fabrication and utilization on flexible substrates.

Subject Categories:

  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Fabrication Metallurgy
  • Crystallography
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE