Accession Number:

ADA625038

Title:

Thin Film Materials and Devices for Resistive Temperature Sensing Applications

Descriptive Note:

Doctoral thesis

Corporate Author:

PENNSYLVANIA STATE UNIV STATE COLLEGE

Personal Author(s):

Report Date:

2015-05-21

Pagination or Media Count:

163.0

Abstract:

Thin films of vanadium oxide VOx and hydrogenated amorphous silicon a-SiH are the two dominant material systems used in resistive infrared radiation detectors microbolometers for sensing long wave infrared LWIR wavelengths in the 8-14 micrometers range. Typical thin films of VOx x less than 2 currently used in the bolometer industry have a magnitude of temperature coefficient of resistance TCR between 2K - 3K. In contrast, thin films of hydrogenated germanium SiGeH have TCR between 3K to 4K. Devices made from either of these materials have resulted in similar device performance with NETD approximately equal to 25 mK. The performance of the microbolometers is limited by the electronic noise, especially 1f noise. Therefore, regardless of the choice of bolometer sensing material and read out circuitry, manufacturers are constantly striving to reduce 1f noise while simultaneously increasing TCR to give better signal to noise ratios in their bolometers and ultimately, better image quality with more thermal information to the end user.

Subject Categories:

  • Physical Chemistry
  • Test Facilities, Equipment and Methods
  • Infrared Detection and Detectors
  • Solid State Physics
  • Thermodynamics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE