Accession Number:

ADA624027

Title:

Metal-Organic Vapor Phase Epitaxial Reactor for the Deposition of Infrared Detector Materials

Descriptive Note:

Final rept. 15 Jun 2010-14 Mar 2013

Corporate Author:

RENSSELAER POLYTECHNIC INST TROY NY DEPT OF ELECTRICAL COMPUTER AND SYSTEMS ENGINEERING

Personal Author(s):

Report Date:

2015-04-09

Pagination or Media Count:

20.0

Abstract:

A fully automated metalorganic vapor phase epitaxial MOVPE system to grow various II-VI semiconductor thin films was acquired and installed at Rensselaer Polytechnic Institute RPI during the year 2013. The design and construction of the system was completed in 2012 and the final installation and testing has been carried out during 2013. A set of growth experiments to deposit CdTe and ZnTe thin films on GaAs and Si substrates was carried out to test the system operation. For these test experiments, dimethyl cadmium, diisopropyl tellurium and diethylzinc were used as the Cd, Te and Zn precursors. The system was shown to operate as designed and the plan was to use the system for various thin film deposition. The installed system significantly enhanced the capability of RPI in the area of MOVPE of II-VI materials.

Subject Categories:

  • Physical Chemistry
  • Electrical and Electronic Equipment
  • Infrared Detection and Detectors
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE